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| (R) BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC817-25 BC817-40 s Marking 6B 6C s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature o Value 50 45 5 0.5 1 250 -65 to 150 150 Unit V V V A A mW o o C C September 2002 1/4 BC817-25 / BC817-40 THERMAL DATA R thj-amb * Thermal Resistance Junction-Ambient 2 Max 500 o C/W * Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I E = 0) Test Conditions V CB = 20 V V CB = 20 V V EB = 5 V I C = 10 mA 45 T C = 150 o C Min. Typ. Max. 100 5 100 Unit nA A nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat) V BE(on) h FE Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain I C = 500 mA I C = 500 mA I C = 100 mA for BC817-25 for BC817-40 I B = 50 mA V CE = 1 V V CE = 1 V 160 250 100 8 0.7 1.2 V V 400 600 MHz pF fT C CBO Transition Frequency I C = 10 mA V CE = 5 V f =100 MHz f = 1 MHz Collector-Base IE = 0 V CB = 10 V Capacitance Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 BC817-25 / BC817-40 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BC817-25 / BC817-40 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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